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VSI004N10MS-G - N-Channel Advanced Power MOSFET

Features

  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=4.5 V.
  • VitoMOS® Ⅱ Technology.
  • Fast Switching and High efficiency.
  • 100% Avalanche Tested.
  • Pb-free lead plating; RoHS compliant.
  • VSI004N10MS-G 100V/130A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 100 V 4.5 mΩ 7.0 mΩ 130 A TO-251 Part ID VSI004N10MS-G Package Type TO-251 Marking 004N10M Tape and reel information 75pcs/Tube Maximum ratings, at TA =25°C, unless.

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Datasheet Details

Part number VSI004N10MS-G
Manufacturer Vanguard Semiconductor
File Size 792.65 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSI004N10MS-G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Tested  Pb-free lead plating; RoHS compliant  VSI004N10MS-G 100V/130A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 100 V 4.5 mΩ 7.
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