Datasheet Summary
Features
- Enhancement mode
- Low on-resistance RDS(on) @ VGS=4.5 V
- VitoMOS® Ⅱ Technology
- Fast Switching and High efficiency
- 100% Avalanche Tested
- Pb-free lead plating; RoHS pliant
- VSI004N10MS-G
100V/130A N-Channel Advanced Power MOSFET
V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID
100 V 4.5 mΩ 7.0 mΩ 130 A
TO-251
Part ID VSI004N10MS-G
Package Type TO-251
Marking 004N10M
Tape and reel information 75pcs/Tube
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-Source breakdown voltage Gate-Source voltage
Diode continuous forward current
Continuous drain current @VGS=10V
Pulse drain current tested...