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Features
N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant
VSD025N10MS
100V/32A N-Channel Advanced Power MOSFET
V DS
100 V
R @DS(on),TYP VGS=10 V
20 mΩ
R @DS(on),TYP VGS=4.5V
22 mΩ
I D 32 A
TO-252
Part ID VSD025N10MS
Package Type TO-252
Marking 025N10M
Tape and reel information
2500pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
TC =25°C TC =25°C TA =100°C TC =25°C
L=0.
VSD025N10MS Datasheet
