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VS80110ATD - N-Channel Advanced Power MOSFET

General Description

VS80110ATD designed by the trench processing techniques to achieve extremely low on-resistance.

Key Features

  • Low On-Resistance.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.

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Datasheet Details

Part number VS80110ATD
Manufacturer Vanguard Semiconductor
File Size 238.92 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VS80110ATD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VS80110ATD 80V/110A N-Channel Advanced Power MOSFET Features ♦Low On-Resistance ♦Fast Switching ♦100% Avalanche Tested ♦Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, RoHS Compliant ♦ Description VS80110ATD designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.