VS6516GS Datasheet | Vanguard Semiconductor

Features - N-Channel，5V Logic Level Control - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - VitoMOS® Ⅱ Technology - 100% Avalanche test - Pb-free lead plating; RoHS pliant VS6516GS 65V/10A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 65 V 18 mΩ 26 mΩ 10 A SOP8 Part ID VS6516GS Package Type SOP8 Marking 6516GS Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① EAS Avalanche energy, single pulsed ② PD TSTG , TJ Maximum power dissipation Storage and junction temperature range...