BVDSS (typ.)=-30V Ron(typ.)=18 mΩ @VGS=-10V Ron(typ.)=28 mΩ @VGS=-4.5V Low On-Resistance Fast Switching Lead-Free, Hg-Free,Rohs Compliant VS4805DS -30V/-8A Dual P-.

Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage .

Description VS4805DS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable devic.

VS48CTQ060-1-M3

VS40120AD

VS40200AD

VS40200AP

VS40200AT

VS40200ATD

VS40200BT

VS4020AP

VS4020AS

VS40230AT

VS40280AT

VS40300AT

VS4030AS

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