Datasheet4U Logo Datasheet4U.com

VS4606AS - N+P-Channel Advanced Power MOSFET

Description

VS4606AS designed by the trench processing techniques to achieve extremely low on-resistance.

And fast switching speed and improved transfer effective .

Features

  • N-CH: 30V/6A, RDS(ON)=30mΩ(Typ)@VGS=4.5V.
  • P-CH: -30V/-5.2A,RDS(ON)=45mΩ(Typ)@VGS=-4.5V.
  • Low On-Resistance.
  • Low Vth.

📥 Download Datasheet

Datasheet Details

Part number VS4606AS
Manufacturer Vanguard Semiconductor
File Size 304.68 KB
Description N+P-Channel Advanced Power MOSFET
Datasheet download datasheet VS4606AS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VS4604AD N-Channel 40V MOSFET VBsemi
VS4610AE N-Channel 40V MOSFET VBsemi
VS4620DE-G 40V/14A Dual N-Channel Advanced Power MOSFET Vergiga
VS4620DS-G 40V/11A Dual N-Channel Advanced Power MOSFET Vergiga
VS40200AD N-Channel 40V MOSFET VBsemi

Other Datasheets by Vanguard Semiconductor

Part Number Description
VS4602AP N-Channel Advanced Power MOSFET
VS4603DM6 N-Channel Advanced Power MOSFET
VS4604AD N-Channel Advanced Power MOSFET
VS4604AP N-Channel Advanced Power MOSFET
VS4604AT N-Channel Advanced Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VS4606AS 30V/6A N+P Channel Advanced Power MOSFET Features ♦N-CH: 30V/6A, RDS(ON)=30mΩ(Typ)@VGS=4.5V ♦P-CH: -30V/-5.2A,RDS(ON)=45mΩ(Typ)@VGS=-4.5V ♦Low On-Resistance ♦Low Vth Application ♦Fast Switching ♦150°C Operating Temperature ♦Lead-Free, Green Product Pin Description Description VS4606AS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.
Published: |