Datasheet4U Logo Datasheet4U.com

VS4606AS - N+P-Channel Advanced Power MOSFET

Description

VS4606AS designed by the trench processing techniques to achieve extremely low on-resistance.

And fast switching speed and improved transfer effective .

Features

  • N-CH: 30V/6A, RDS(ON)=30mΩ(Typ)@VGS=4.5V.
  • P-CH: -30V/-5.2A,RDS(ON)=45mΩ(Typ)@VGS=-4.5V.
  • Low On-Resistance.
  • Low Vth.

📥 Download Datasheet

Datasheet preview – VS4606AS

Datasheet Details

Part number VS4606AS
Manufacturer Vanguard Semiconductor
File Size 304.68 KB
Description N+P-Channel Advanced Power MOSFET
Datasheet download datasheet VS4606AS Datasheet
Additional preview pages of the VS4606AS datasheet.

📁 Similar Datasheet

  • VS4604AD - N-Channel 40V MOSFET (VBsemi)
  • VS4610AE - N-Channel 40V MOSFET (VBsemi)
  • VS4620DE-G - 40V/14A Dual N-Channel Advanced Power MOSFET (Vergiga)
  • VS4620DS-G - 40V/11A Dual N-Channel Advanced Power MOSFET (Vergiga)
  • VS40200AD - N-Channel 40V MOSFET (VBsemi)
  • VS40280AT - N-Channel 40V MOSFET (VBsemi)
  • VS4080AD - N-Channel 40V MOSFET (VBsemi)
  • VS4101 - White LED Step-Up Converter (VSS)
  • VS43VLNVWMTF - Transient Voltage Suppressor (ROHM)
  • VS4435AS - P-Channel 30V MOSFET (VBsemi)
Other Datasheets by Vanguard Semiconductor
  • VS4602AP - N-Channel Advanced Power MOSFET
  • VS4603DM6 - N-Channel Advanced Power MOSFET
  • VS4604AD - N-Channel Advanced Power MOSFET
  • VS4604AP - N-Channel Advanced Power MOSFET
  • VS4604AT - N-Channel Advanced Power MOSFET
  • VS4604AT-A - N-Channel Advanced Power MOSFET
  • VS4604AT-K - N-Channel Advanced Power MOSFET
  • VS4604ATD - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
VS4606AS 30V/6A N+P Channel Advanced Power MOSFET Features ♦N-CH: 30V/6A, RDS(ON)=30mΩ(Typ)@VGS=4.5V ♦P-CH: -30V/-5.2A,RDS(ON)=45mΩ(Typ)@VGS=-4.5V ♦Low On-Resistance ♦Low Vth Application ♦Fast Switching ♦150°C Operating Temperature ♦Lead-Free, Green Product Pin Description Description VS4606AS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.
Published: |