Datasheet4U Logo Datasheet4U.com

VS3107ATD - N-Channel Advanced Power MOSFET

Description

VS3107ATD designed by the trench processing techniques to achieve extremely low on-resistance.

Features

  • Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number VS3107ATD
Manufacturer Vanguard Semiconductor
File Size 268.57 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VS3107ATD Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VS3125 Quad Bus Switch with Individual Active Low Enables Vaishali Semiconductor
VS3 AC-DC / Configurable Emerson
VS3000 Transmitter/Receiver Valens
VS3000A0S Transmitter/Receiver Valens
VS3000A0SESB Transmitter/Receiver Valens

Other Datasheets by Vanguard Semiconductor

Part Number Description
VS3107AT N-Channel Advanced Power MOSFET
VS3009DS 30V/8A Dual N-Channel Advanced Power MOSFET
VS30150AD N-Channel Advanced Power MOSFET
VS3019AD N-Channel Advanced Power MOSFET
VS3038AO N-Channel Advanced Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VS3107ATD 80V/190A N-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VS3107ATD designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
Published: |