VG26V18160CJ
Description
The device is CMOS Dynamic RAM organized as 1,048,576 words x 16 bits. It is fabrionly or 3.3V only power supply. Low voltage operation is more suitable to be used on battery
VG26(V)(S)18160CJ 1,048,576 x 16
- Bit CMOS Dynamic RAM cated with an advanced submicron CMOS technology and designed to operate from a single 5V backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported and very slow CBR cycles are being performed. It is packaged in JEDEC standard 42
- pin plastic SOJ.
Features
- Single 5V ( ± 10 %) or 3.3V (+10%,-5%) only power supply
- High speed t RAC access time : 50/60 ns
- Low power dissipation
- Active mode : 5V version 605/550 m W (Max.) 3.3V version 396/360 m W (Max.)
- Standby mode : 5V version 1.375 m W (Max.) 3.3V version 0.54 m W (Max.)
- Fast Page Mode access
- I/O level : TTL patible (Vcc = 5V) LVTTL patible (Vcc = 3.3V)
- 1024 refresh cycles in 16 ms (Std) or 128ms (S
- version)
- 4 refresh mode :
- RAS only...
