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SI4684DY_RC - R-C Thermal Model Parameters

Download the SI4684DY_RC datasheet PDF. This datasheet also covers the SI4684DY-RC variant, as both devices belong to the same r-c thermal model parameters family and are provided as variant models within a single manufacturer datasheet.

Description

The parametric values in the R-C thermal model have been derived using curve-fitting techniques.

These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

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Note: The manufacturer provides a single datasheet file (SI4684DY-RC_VaishaliSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SI4684DY_RC
Manufacturer Vaishali Semiconductor
File Size 216.15 KB
Description R-C Thermal Model Parameters
Datasheet download datasheet SI4684DY_RC Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Si4684DY_RC Vishay Siliconix www.DataSheet4U.com R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank configuration are included. The corresponding values for the Cauer/Filter configuration are available upon request. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.
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