VST12N100 mosfet equivalent, mosfet.
* VDS =120V,ID =60A RDS(ON) =10mΩ(typical) @ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating te.
The VST12N100 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. .
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