Datasheet4U Logo Datasheet4U.com

2N4150S - NPN Power Silicon Transistor

Download the 2N4150S datasheet PDF. This datasheet also covers the 2N4150 variant, as both devices belong to the same npn power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Features

  • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/394.
  • Radiation Tolerant Levels M, D, P, L and R.
  • TO-5 Package.
  • Designed for Use in High Current Switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N4150-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N4150S
Manufacturer VPT
File Size 390.39 KB
Description NPN Power Silicon Transistor
Datasheet download datasheet 2N4150S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N4150S NPN Transistor Semicoa Semiconductor
2N4150S NPN POWER SILICON TRANSISTOR Microsemi Corporation
2N4150 NPN Transistor Semicoa Semiconductor
2N4150 NPN POWER SILICON TRANSISTOR Microsemi Corporation
2N4150 NPN Power Silicon Transistor MA-COM

Other Datasheets by VPT

Part Number Description
2N4150 NPN Power Silicon Transistor
2N4029 PNP Silicon Transistor
2N4033 PNP Silicon Transistor
2N4033UA PNP Silicon Transistor
2N4033UB PNP Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N4150, 2N4150S NPN Power Silicon Transistor Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/394 • Radiation Tolerant Levels M, D, P, L and R • TO-5 Package • Designed for Use in High Current Switching Applications • Ideal for Converters, Inverters and Wide Band Amplifiers Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Rev. V4 Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Base Cutoff Current Collector - Base Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 100 mA dc V(BR)CEO V dc 70 — VEB = 7.0 Vdc VEB = 5.
Published: |