* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* .

* Primary Side Switch GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Para.

VBZE20N06

VBZE20N20

VBZE10N65S

VBZE30N10

VBZE4N60

VBZE50N04

VBZE50P06

VBZE5N20

VBZ2300

VBZ2302

VBZ2305

VBZ2310

VBZ2315

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