logo

VBPB112MI50 Datasheet, VBsemi

VBPB112MI50 igbt equivalent, 1200v trench and fieldstop igbt.

VBPB112MI50 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 3.18MB)

VBPB112MI50 Datasheet

Features and benefits


* Very Low VCEsat
* Low turn-off losses
* High speed switching
* Maximum junction temperature 175°C
* Ultra low gate charge (Qg)
* Avalanche energ.

Application


* Telecommunications - Server and telecom power supplies
* Lighting - High-intensity discharge (HID) - Fluoresce.

Image gallery

VBPB112MI50 Page 1 VBPB112MI50 Page 2 VBPB112MI50 Page 3

TAGS

VBPB112MI50
1200V
Trench
and
Fieldstop
IGBT
VBsemi

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts