VBFB1206N Datasheet, VBsemi

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* .

* Primary Side Switch G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Paramet.

VBFB1252M

VBFB1104N

VBFB165R02S

VBFB16R02S

VBFB16R07S

VBFB2201K

VBFB2610N

VBF-2435

VBF16I07

VB024

VB025BSP

VB025SP

VB026BSP