VBE1206N datasheet, mosfet equivalent, VBsemi

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Features and benefits

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* PWM Optimized
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* .

* Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) P.

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TAGS

VBE1206N

Manufacturer

VBsemi

Related datasheet

VBE1203M