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STW12NK95Z - N-Channel 900V Power MOSFET

Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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Datasheet Details

Part number STW12NK95Z
Manufacturer VBsemi
File Size 283.25 KB
Description N-Channel 900V Power MOSFET
Datasheet download datasheet STW12NK95Z Datasheet

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STW12NK95Z-VB www.VBsemi.com STW12NK95Z-VB Datasheet N-Channel 900 V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 900 VGS = 10 V 73 9 17 Single 0.