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PSMN025-100D
PSMN025-100D Datasheet
www.VBsemi.com
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
100
0.0185 at VGS = 10 V
ID (A)a 45
Qg (Typ.) 38 nC
TO-252
D
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS • Primary Side Switch • Isolated DC/DC Converter
G
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C
TC = 25 °C TA = 25 °C
L = 0.
PSMN025-100D Datasheet
