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NTP5426NG - N-Channel MOSFET

Features

  • 175 °C Junction Temperature.
  • TrenchFET® Power MOSFET.
  • Material categorization: TO-220AB D www. VBsemi. com G GDS S N-Channel MOSFET.

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Datasheet Details

Part number NTP5426NG
Manufacturer VBsemi
File Size 253.79 KB
Description N-Channel MOSFET
Datasheet download datasheet NTP5426NG Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTP5426NG-VB NTP5426NG-VB Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A Single FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: TO-220AB D www.VBsemi.com G GDS S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 120 90 Pulsed Drain Current IDM 350 A Continuous Source Current (Diode Conduction) IS 70a Avalanche Current IAS 50 Single Avalanche Energy (Duty Cycle  1 %) L = 0.1 mH EAS 125 mJ Maximum Power Dissipation TC = 25 °C TA = 25 °C PD 136 3b, 8.
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