Datasheet4U Logo Datasheet4U.com

BSP123 - N-Channel MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFETs.
  • 175 °C Maximum Junction Temperature.
  • Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET.

📥 Download Datasheet

Datasheet Details

Part number BSP123
Manufacturer VBsemi
File Size 238.53 KB
Description N-Channel MOSFET
Datasheet download datasheet BSP123 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSP123 Small-Signal Transistor Siemens Semiconductor Group
BSP123 SIPMOS Small-Signal-Transistor Infineon Technologies AG
BSP120 N-channel enhancement mode vertical D-MOS transistor NXP
BSP121 N-channel enhancement mode vertical D-MOS transistor NXP
BSP122 N-channel enhancement mode vertical D-MOS transistor NXP

Other Datasheets by VBsemi

Part Number Description
BSP122 N-Channel MOSFET
BSP030 N-Channel MOSFET
BSP296 N-Channel 100V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSP123-VB BSP123-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.100 at VGS = 10 V 100 0.120 at VGS = 4.5 V ID (A) 5.0 4.5 SOT-223 D S D G FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 Continuous Drain Current (TJ = 175 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID 5.0 4.5 3.5 3.
Published: |