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BSC014N03LS G-VB
BSC014N03LS G-VB Datasheet
N-Channel 30 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () 0.0018 at VGS = 10 V 0.0025 at VGS = 4.5 V
ID (A)a, e 160 130
Top View
DFN5X6 Bottom View
Qg (Typ.)
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested
82 nC
APPLICATIONS
• OR-ing • Server
D Top View
1
8
2
7
3
6
G
4
5
PIN1
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C ID
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
IAS L = 0.
BSC014N03LS Datasheet
