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APM4008NG-VB
APM4008NG-VB Datasheet
N-Channel 40 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) () MAX.
0.005 at VGS = 10 V 40
0.006 at VGS = 4.5 V
ID (A) 100 98
Qg (TYP.) 53 nC
TO-263
FEATURES • ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization:
for definitions of compliance please see
D
G
S D G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) Avalanche Current Single Avalanche Energy a Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 125 °C
L = 0.
APM4008NG Datasheet
