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30P10GS-VB
30P10GS-VB Datasheet P-Channel 100 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) - 100
RDS(on) () 0.040 at VGS = - 10 V 0.050 at VGS = - 4.5 V
ID (A) - 37 - 32
Qg (Typ.) 54 nC
D2PAK (TO-263)
G D S
FEATURES • TrenchFET® Power MOSFET
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
- 100
V
VGS
± 20
TC = 25 °C
- 37
Continuous Drain Current (TJ = 150 °C)b
TC = 70 °C TA = 25 °C
ID
- 29.5 - 10b, c
Pulsed Drain Current
TA = 70 °C
- 8.2b, c A
IDM
- 150
Continuous Source Current (Diode Conduction)
TC = 25 °C TA = 25 °C
IS
- 50a - 6.75b, c
Avalanche Current Single Pulse Avalanche Energy
IAS
- 35
L = 0.
30P10GS Datasheet
