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UM8814 - 20V Common-Drain Dual N-Channel Enhancement Mode MOSFET

Description

The UM8814 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology..

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number UM8814
Manufacturer UniverChipSemi
File Size 943.94 KB
Description 20V Common-Drain Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet UM8814 Datasheet

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UM8814 20V Common-Drain Dual N-Channel Enhancement Mode MOSFET  DESCRIPTION The UM8814 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.  FEATURE  20V/7.0A, RDS(ON)=15mΩ (typ.)@VGS=4.5V  20V/6.5A, RDS(ON)=19mΩ (typ.)@VGS=2.5V  20V/5.0A, RDS(ON)=26mΩ (typ.)@VGS=1.
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