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UM4606 - 30V Complementary Enhancement Mode MOSFET

General Description

The UM4606 is the complementary enhancement mode power field effect transistor is produced using high cell density advanced trench technology to provide excellent RDS(ON).

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Datasheet Details

Part number UM4606
Manufacturer UniverChipSemi
File Size 1.15 MB
Description 30V Complementary Enhancement Mode MOSFET
Datasheet download datasheet UM4606 Datasheet

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Full PDF Text Transcription (Reference)

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UM4606 30V Complementary Enhancement Mode MOSFET  DESCRIPTION The UM4606 is the complementary enhancement mode power field effect transistor is produced using high cell density advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications  FEATURE  30V/7.0A, RDS(ON)=21mΩ @VGS=10V N_CH  -30V/-6.0A, RDS(ON)=33mΩ @VGS=-10V P_CH  30V/5.0A, RDS(ON)=34mΩ @VGS=4.5V N_CH  -30V/-5.0A, RDS(ON)=38mΩ @VGS=-4.