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MIE-536A2U - AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

General Description

The MIE-536A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package.

Key Features

  • l l l l l High radiant power and high radiant intensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 35° 1.00 (.040) FLAT.

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Datasheet Details

Part number MIE-536A2U
Manufacturer Unity Opto Technology
File Size 30.66 KB
Description AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-536A2U Datasheet

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MIE-536A4U AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-536A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. MIE-536A2U Package Dimensions φ5.05 (.200) Unite: mm ( inches ) 5.47 (.215) 7.62 (.300) 5.90 (.230) Features l l l l l High radiant power and high radiant intensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 35° 1.00 (.040) FLAT DENOTES CATHODE 23.4 0MIN. (.920) 0.50 TYP. (.020) 1.00MIN (.040) 2.54 (.100) A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3.