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MIE-516A4U - AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Description

The MIE-516A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package.

Features

  • l l l l l High radiant power and high radiant intensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 16° 1.00 (.040) FLAT.

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Datasheet Details

Part number MIE-516A4U
Manufacturer Unity Opto Technology
File Size 30.72 KB
Description AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Datasheet download datasheet MIE-516A4U Datasheet

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Other Datasheets by Unity Opto Technology

Part Number Description
MIE-516A2U AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-516L3U GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-514A4 AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
MIE-514H4 GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
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Full PDF Text Transcription

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AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-516A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. MIE-516A4U φ5.05 (.200) Package Dimensions Unite: mm ( inches ) 5.47 (.215) 7.62 (.300) 5.90 (.230) Features l l l l l High radiant power and high radiant intensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 16° 1.00 (.040) FLAT DENOTES CATHODE 23.4 0MIN. (.920) .50 TYP. (.020) 1.00MIN (.040) 2.54 (.100) A C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3.
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