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UJ4C075018K3S Datasheet, UnitedSiC

UJ4C075018K3S fet equivalent, sic fet.

UJ4C075018K3S Avg. rating / M : 1.0 rating-11

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UJ4C075018K3S Datasheet

Features and benefits

S (3) w On-resistance RDS(on): 18mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 102nC w Low body diode VFSD: 1.14V w Low gate charge:.

Application

w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction .

Description

The UJ4C075018K3S is a 750V, 18mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characte.

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TAGS

UJ4C075018K3S
SiC
FET
UnitedSiC

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