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UF3C065030K3S Datasheet, UnitedSiC

UF3C065030K3S mosfet equivalent, mosfet.

UF3C065030K3S Avg. rating / M : 1.0 rating-11

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UF3C065030K3S Datasheet

Features and benefits

w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD.

Application

w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction h.

Description

United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the bes.

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TAGS

UF3C065030K3S
MOSFET
UF3C065030B3
UF3C065030T3S
UF3C065040K3S
UnitedSiC

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