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TC2623 Datasheet, United Monolithic Semiconductors

TC2623 transistor equivalent, 12ghz super low noise hemt / algaas/gaas field effect transistor.

TC2623 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 86.84KB)

TC2623 Datasheet
TC2623
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 86.84KB)

TC2623 Datasheet

Features and benefits

§ 0.3dB minimum noise figure @ 5GHz § 0.65dB minimum noise figure @ 12GHz § 14dB associated gain @ 5GHz § 10.5dB associated gain @ 12GHz 1 : Gate 2 : Source 3 : Drain 4 :.

Description

The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with a SI3N4 layer. It is mounted in a 70mils hermetic ceramicm.

Image gallery

TC2623 Page 1 TC2623 Page 2 TC2623 Page 3

TAGS

TC2623
12GHz
Super
Low
Noise
HEMT
AlGaAs
GaAs
Field
Effect
Transistor
United Monolithic Semiconductors

Manufacturer


United Monolithic Semiconductors

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