Datasheet Details
| Part number | CHK015AaQIA |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 815.41 KB |
| Description | 15W Power Packaged Transistor |
| Datasheet |
 CHK015AaQIA Datasheet
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Description
The CHK015AaQIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.
It offers general purpose and broadband solutions for a variety of RF power applications.
It is well suited for multi-purpose applications such as radar and telecommunication.
Features
- Wide band capability: up to 4GHz.
- Pulsed and CW operating modes.
- GaN technology: High Pout & High PAE.
- DC bias: VDS up to 50V.
- Low cost package: 14L-DFN3x4.
- MTTF > 106 hours @ Tj = 200°C.
- RoHS N°2011/65.
- REACh N°1907/2006 VDS = 50V, ID_Q = 75mA, Freq = 2.9GHz Pulsed mode (1ms, 10%) 55 1.8 PAE 50 1.6 45 Pout 1.4 40 1.2 35 1 ID 30 0.8 25 0.6 20 Gain 0.4 15 0.2 10 0 10 12 14 16 18 20 22 24 26 28 Input Power (dBm) Gain (dB), Pout (d.