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CHA8611-99F - 18W X-Band High Power Amplifier

Description

added efficiency.

Features

  • Frequency range: 8.5-11GHz.
  • High output power: 18W.
  • High PAE: 43%.
  • Linear Gain: 24dB.
  • DC bias: Vd=25Volt @ Idq=0.8A.
  • Chip size 4.36x2.57x0.1mm.
  • Available in bare die Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Pout Output Power PAE Associated Power Added Efficiency Min Typ Max Unit 8.5 11 GHz 24 dB 18 W 43 % Ref. DSCHA86110301 - 27 Oct 20 1/26 Specifications subject to change without n.

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Datasheet Details

Part number CHA8611-99F
Manufacturer United Monolithic Semiconductors
File Size 1.69 MB
Description 18W X-Band High Power Amplifier
Datasheet download datasheet CHA8611-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA8611-99F 18W X-Band High Power Amplifier GaN Monolithic Microwave IC Description V+ The CHA8611-99F is a two stage High Power Amplifier operating between 8.5 and 11GHz and providing typically 18W of saturated output power and 43% of power added efficiency. In Out It is designed for a wide range of STG1 STG2 applications, from military to commercial communication systems. The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. V- It is available in chip form. Main Features ■ Frequency range: 8.5-11GHz ■ High output power: 18W ■ High PAE: 43% ■ Linear Gain: 24dB ■ DC bias: Vd=25Volt @ Idq=0.8A ■ Chip size 4.36x2.57x0.