0.25µm Power pHEMT Technology 8.5
  –11.5GHz Frequency Range 8W Output Power @ 4dBc High PAE: > 40% @ 4dBc 20dB nominal Gain Quiescent Bias point: Vd = 8V, I.

This device is manufactured using a UMS 0.25 µm power pHEMT process, including, via holes through the substrate and air.

www.DataSheet4U.comThe Pout (dBm) & PAE (%) & Gain (dB) CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS 0.25 µm power pHEMT process, including, via holes through .

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