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CHA7012 Datasheet, United Monolithic Semiconductors

CHA7012 amplifier equivalent, x-band hbt high power amplifier.

CHA7012 Avg. rating / M : 1.0 rating-11

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CHA7012 Datasheet

Features and benefits

Frequency band : 9.2 -10.4GHz Output power (P3dB ): 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface -VAnalog.

Application

This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridge. A nit.

Description

The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed www.DataSheet4U.com for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridge. A nitride laye.

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CHA7012 Page 1 CHA7012 Page 2 CHA7012 Page 3

TAGS

CHA7012
X-band
HBT
High
Power
Amplifier
CHA7010
CHA7114
CHA7115-99F
United Monolithic Semiconductors

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