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CHA6664-QDG Datasheet 12-16GHz 1W High Power Amplifier

Manufacturer: United Monolithic Semiconductors

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Datasheet Details

Part number CHA6664-QDG
Manufacturer United Monolithic Semiconductors
File Size 347.20 KB
Description 12-16GHz 1W High Power Amplifier
Datasheet download datasheet CHA6664-QDG Datasheet

General Description

The CHA6664-QDG is a three-stages Ku-band high power amplifier.

The circuit is manufactured with a standard Power P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is supplied in RoHS compliant SMD package.

Overview

CHA6664-QDG RoHS COMPLIANT 12-16GHz 1W High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless.

Key Features

  • 35 dB(S21), dB(S11), dB(S22) versus frequency (GHz) S21, S11, S22 (dB).
  • 0.25 µm Power pHEMT Technology.
  • 12-16 GHz Frequency Range.
  • 31.5 dBm Saturated Output Power.
  • High gain: 28dB.
  • Quiescent Bias Point: 8V, 600mA.
  • 24L-QFN4x4 SMD package 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Frequency (GHz) dB(S21) dB(S11) dB(S22) Typical on board measurements Main Characteristics Tamb = +25° C, Vd1=Vd2=Vd3=+8V, I.

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