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CHA6664-QDG Datasheet, United Monolithic Semiconductors

CHA6664-QDG amplifier equivalent, 12-16ghz 1w high power amplifier.

CHA6664-QDG Avg. rating / M : 1.0 rating-11

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CHA6664-QDG Datasheet

Features and benefits

35 dB(S21), dB(S11), dB(S22) versus frequency (GHz) S21, S11, S22 (dB)
* 0.25 µm Power pHEMT Technology
* 12-16 GHz Frequency Range
* 31.5 dBm Saturated Ou.

Description

The CHA6664-QDG is a three-stages Ku-band high power amplifier. The circuit is manufactured with a standard Power P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in R.

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CHA6664-QDG Page 1 CHA6664-QDG Page 2 CHA6664-QDG Page 3

TAGS

CHA6664-QDG
12-16GHz
High
Power
Amplifier
CHA6652-QXG
CHA6005-99F
CHA6005-QEG
United Monolithic Semiconductors

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