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CHA6362-QXG - 17.7 - 19.7GHz Power Amplifier

General Description

The CHA6362-QXG is a three stage monolithic GaAs high power circuit producing 2.5 Watt output power.

It integrates a power detector and allows gain control.

ESD protections are included.

Key Features

  • Frequency range: 17.7- 19.7GHz.
  • 34.5dBm saturated power.
  • 42dBm OIP3.
  • 22dB gain.
  • DC bias: Vd = 6.0Volt @ Id = 1.34A.
  • QFN5x6.
  • MSL3 Power (dBm) & PAE (%) Power & PAE 36 34 32 30 Psat P1dB PAE sat 28 26 24 22 20 17 17.5 18 18.5 19 19.5 20 20.5 21 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated output power OIP3 Output IP3 Min Typ Max Unit 17.7 19.7 GHz.

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Datasheet Details

Part number CHA6362-QXG
Manufacturer United Monolithic Semiconductors
File Size 800.38 KB
Description 17.7 - 19.7GHz Power Amplifier
Datasheet download datasheet CHA6362-QXG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA6362-QXG 17.7 - 19.7GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6362-QXG is a three stage monolithic GaAs high power circuit producing 2.5 Watt output power. It integrates a power detector and allows gain control. ESD protections are included. It is designed for Point To Point Radio or K-band Sat- Com application. The circuit is manufactured with a pHEMT process, 0.15µm gate length. It is supplied in RoHS compliant SMD package. Main Features ■ Frequency range: 17.7- 19.7GHz ■ 34.5dBm saturated power ■ 42dBm OIP3 ■ 22dB gain ■ DC bias: Vd = 6.0Volt @ Id = 1.34A ■ QFN5x6 ■ MSL3 Power (dBm) & PAE (%) Power & PAE 36 34 32 30 Psat P1dB PAE sat 28 26 24 22 20 17 17.5 18 18.5 19 19.5 20 20.