CHA6015-99F
Description
The CHA6015-99F is a HPA that provides typically 37.5d Bm output power on the frequency band 2-8GHz. The circuit is dedicated to defence applications and also well suited for a wide range of microwave applications and systems. The circuit is manufactured with a p HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Main Features
- Broadband performances: 2-8GHz
- Linear Gain: 18.5d B
- Pout at 3d B pression : 37.5d Bm
- PAE at 3d B pression : 29%
- DC bias: Vd=7Volt@Id=2A
- Chip size: 4.68x6.53x0.07mm
Main Electrical Characteristics
Tamb.= +25°C, Vd = 7V, Id (Quiescent) = 2A, CW
Symbol
Parameter
Min
Freq Frequency range
Gain Linear Gain
P3d B Output Power @3d B gain pression
PAE3d B
Power Added Efficiency @ 3d B gain pression
Typ
18.5 37.5 29
Max Unit 8 GHz d B d Bm
%
Ref. : DSCHA60150301
- 27 Oct 20
1/14
Specifications subject to change without notice
United Monolithic...
