• Part: CHA5115-QDG
  • Description: X-band Medium Power Amplifier
  • Manufacturer: United Monolithic Semiconductors
  • Size: 838.27 KB
Download CHA5115-QDG Datasheet PDF
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CHA5115-QDG Datasheet Text

CHA5115-QDG X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 28dBm output power associated to 30% power added efficiency at 3dB gain pression. It is supplied in RoHS pliant SMD package. UUMMS S AA5316168785A YYYYWG Main Features  Frequency band: 8-12GHz  Output power: 28dBm @ 3dBp  Linear gain: 21.5dB  High PAE: 30% @ 3dBp  Quiescent bias point: Vd=8V, Id=190mA  24L-QFN4x4  MSL3 Pout (dBm) & PAE (%) 35 33 31 29 27 25 23 21 19 17 15 7 25 23 21 19 17 15 13 PAE_3dBp @ Temp=25°C 11 Pout_3dBp @ Temp=25°C 9 Linear Gain @ Temp=25°C 7 5 8 9 10 11 12 13 Frequency (GHz)...