Datasheet Details
| Part number | CHA5115-QDG |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 838.27 KB |
| Description | X-band Medium Power Amplifier |
| Datasheet |
 CHA5115-QDG Datasheet
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Description
The CHA5115-QDG is a monolithic two-stage GaAs medium power amplifier designed for X-band applications.
The MPA provides typically 28dBm output power associated to 30% power added efficiency at 3dB gain compression.
It is supplied in RoHS compliant SMD package.
Features
- Frequency band: 8-12GHz Output power: 28dBm @ 3dBcomp Linear gain: 21.5dB High PAE: 30% @ 3dBcomp Quiescent bias point: Vd=8V, Id=190mA 24L-QFN4x4 MSL3 Pout (dBm) & PAE (%) 35 33 31 29 27 25 23 21 19 17 15 7 25 23 21 19 17 15 13 PAE_3dBcomp @ Temp=25°C 11 Pout_3dBcomp @ Temp=25°C 9 Linear Gain @ Temp=25°C 7 5 8 9 10 11 12 13 Frequency (GHz) Gain (dB) Main Characteristics Tamb = 20°C, Vd = 8V, Id (Quiescent) = 190mA, Drain Pulse width=100µs, Duty cycle = 20% S.