• Part: CHA3689-99F
  • Description: Low Noise Amplifier
  • Manufacturer: United Monolithic Semiconductors
  • Size: 865.72 KB
Download CHA3689-99F Datasheet PDF
United Monolithic Semiconductors
CHA3689-99F
Description The CHA3689-99F is a three-stage self biased wide band monolithic low noise Vd1 Vd2 amplifier. RFin It is designed for a wide range of applications, from military to mercial munication systems. The circuit is manufactured with a p HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and B electron beam gate lithography. It is available in chip form. Vd3 RFout Main Features - Broadband performance: 12.5-30GHz - 2.0d B noise figure - 26d B gain (12.5-26GHz) - 26d Bm output IP3 (18-30GHz) - Low DC power consumption - DC bias: Vd=4 Volt @ Id= 90 /120m A - Chip size : 2.45 x 1.21 x 0.1mm Gain NF On wafer typical measurements @ 120m A Main Characteristics Tamb = +25°C, Vd1=Vd2=Vd3 = +4V Pads B, D = GND (High current configuration) Symbol Parameter Min Typ Max Unit Freq Frequency range 30 GHz Gain Linear Gain 26 d B NF Noise Figure 2.6 d B Pout1d B Output Power @1d B p. 15 d Bm Ref. : DSCHA36890301 - 27 Oct...