CHA3689-99F - Low Noise Amplifier

United Monolithic Semiconductors

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Datasheet Details

Part number: CHA3689-99F
Manufacturer: United Monolithic Semiconductors
File Size: 865.72 KB
Datasheet: CHA3689-99F-UnitedMonolithicSemiconductors.pdf
Description: Low Noise Amplifier

CHA3689-99F Product details

Description

The CHA3689-99F is a three-stage self biased wide band monolithic low noise Vd1 Vd2 amplifier.RFin It is designed for a wide range of applications, from military to commercial communication systems.The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and B electron beam gate lithography.It is available in chip form.Vd3 RFout D Main.

Features

Broadband performance: 12.5-30GHz.
2.0dB noise figure.
26dB gain (12.5-26GHz).
26dBm output IP3 (18-30GHz).
Low DC power consumption.
DC bias: Vd=4 Volt @ Id= 90 /120mA.
Chip size : 2.45 x 1.21 x 0.1mm Gain NF On wafer typical measurements @ 120mA Main Characteristics Tamb = +25°C, Vd1=Vd2=Vd3 = +4V Pads B, D = GND (High current configuration) Symbol Parameter Min Typ Max Unit Freq Frequency range 12.5 30 GHz Gain Linear Gain 26 dB NF Noise Figu.

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Low Noise Amplifier United Monolithic Semiconductors

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