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CHA3689-99F Datasheet

Manufacturer: United Monolithic Semiconductors
CHA3689-99F datasheet preview

Datasheet Details

Part number CHA3689-99F
Datasheet CHA3689-99F-UnitedMonolithicSemiconductors.pdf
File Size 865.72 KB
Manufacturer United Monolithic Semiconductors
Description Low Noise Amplifier
CHA3689-99F page 2 CHA3689-99F page 3

CHA3689-99F Overview

The CHA3689-99F is a three-stage self biased wide band monolithic low noise Vd1 Vd2 amplifier. RFin It is designed for a wide range of applications, from military to mercial munication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and B electron beam gate lithography.

CHA3689-99F Key Features

  • Broadband performance: 12.5-30GHz
  • 2.0dB noise figure
  • 26dB gain (12.5-26GHz)
  • 26dBm output IP3 (18-30GHz)
  • Low DC power consumption
  • DC bias: Vd=4 Volt @ Id= 90 /120mA
  • Chip size : 2.45 x 1.21 x 0.1mm
  • 27 Oct 20
  • Parc Mosaic
  • 10, Avenue du Québec
United Monolithic Semiconductors logo - Manufacturer

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CHA3689-99F Distributor

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