Datasheet4U Logo Datasheet4U.com

CHA2295 - 6 - 11GHz Buffer Splitter Amplifier

Description

The CHA2295 is a broadband buffer splitter three-stage monolithic amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The backside of the chip is both RF and DC grounds.

Features

  • Broadband performance: 6-11GHz.
  • 14dBm saturated output power.
  • 18dB ±1.5dB gain flatness.
  • Good broadband matching.
  • Low DC power consumption: 160mA @ 3.5V.
  • Chip size: 2.26 X 1.33 X 0.10 mm 20 19 18 17 16 15 14 13 12 Gain channel 1 11 Gain channel 2 10 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Typical on wafer measurements : Gain (dB) Main Characteristics Tamb=25°C Symbol Fop G Parameter Operating fr.

📥 Download Datasheet

Datasheet Details

Part number CHA2295
Manufacturer United Monolithic Semiconductors
File Size 184.42 KB
Description 6 - 11GHz Buffer Splitter Amplifier
Datasheet download datasheet CHA2295 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CHA-20NF (CHA-20xx) Coaxial Attenuators Component General
CHA-20NM (CHA-20xx) Coaxial Attenuators Component General
CHA-20NMF (CHA-20xx) Coaxial Attenuators Component General
CHA-20SF (CHA-20xx) Coaxial Attenuators Component General
CHA-20SM (CHA-20xx) Coaxial Attenuators Component General

Other Datasheets by United Monolithic Semiconductors

Part Number Description
CHA2291 10-18GHz Low Noise / Variable Gain Amplifier
CHA2292 17-24GHz Low Noise / Variable Gain Amplifier
CHA2293 24.5-29.5GHz Low Noise / Variable Gain Amplifier
CHA2293-99F Variable Gain Amplifier
CHA2294 35-40GHz Low Noise/ Variable Gain Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CHA2295 6-11GHz Buffer Splitter Amplifier GaAs Monolithic Microwave IC Description The CHA2295 is a broadband buffer splitter three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ Broadband performance: 6-11GHz ■ 14dBm saturated output power. ■ 18dB ±1.5dB gain flatness ■ Good broadband matching ■ Low DC power consumption: 160mA @ 3.5V ■ Chip size: 2.26 X 1.33 X 0.