900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Unisonic Technologies

XL1225 Datasheet Preview

XL1225 Datasheet

MEDIUM POWER LOW VOLTAGE TRANSISTOR

No Preview Available !

UNISONIC TECHNOLOGIES CO.,LTD.
XL/ML1225
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
DESCRIPTION
The XL1225/ML1225 silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts are
intended for low cost high volume applications.
SCR
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
- XL1225G-xx-AE3-R
XL1225L-xx-T92-B
XL1225G-xx-T92-B
XL1225L-xx-T92-K
XL1225G-xx-T92-K
- ML1225G-xx-AE3-R
ML1225L-xx-T92-B
ML1225G-xx-T92-B
ML1225L-xx-T92-K
ML1225G-xx-T92-K
Note: Pin Assignment : G: Gate K: Cathode A: Anode
Package
SOT-23
TO-92
TO-92
SOT-23
TO-92
TO-92
Pin Assignment
123
GKA
KGA
KGA
GKA
KGA
KGA
Packing
Tape Reel
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
MARKING
Package
SOT-23
TO-92
XL1225
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co.,LTD.
ML1225
L25G
1 of 3
QW-R301-003.G




Unisonic Technologies

XL1225 Datasheet Preview

XL1225 Datasheet

MEDIUM POWER LOW VOLTAGE TRANSISTOR

No Preview Available !

XL/ML1225
SCR
ABSOLUATE MAXIUM RATINGS (Ta= 25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive Peak Off-State Voltage
(TJ =40 ~ 125C, RGK =1k)
XL1225
ML1225
VDRM
400
300
V
On-State Current (Tc=40C)
IT(RMS)
0.8
A
Average On-State Current (Half Cycle=180,Tc=40C)
IT(AV)
0.5
A
Peak Reverse Gate Voltage (IGR=10A)
VGRM
1
V
Peak Gate Current (10s Max.)
IGM 0.1 A
Gate Dissipation (20ms Max.)
PG(AV) 150 mW
Junction Temperature
TJ
+125
C
Storage Temperature
TSTG
-40 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0~70operating temperature range
and assured by design from –20C ~85C.
ELECTRICAL CHARACTERISTICS (Ta= 25C, unless otherwise specified.)
PARAMETER
Off State Leakage Current
Off State Leakage Current
On State Voltage
On State Threshold Voltage
On State Slops Resistance
Gate Trigger Current
Gate Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
Critical Rate of Current Rise
Gate Controlled Delay Time
Commutated Turn-off Time
SYMBOL
TEST CONDITIONS
IDRM VDRM(RGK=1K), TJ =125C
IDRM VDRM(RGK=1K), TJ =25C
VT
AT IT=0.4A
AT IT=0.8A
VT(TO) TJ =125C
Rt TJ =125C
IGT VD=7V
VGT VD=7V
IH RGK=1K
IL RGK=1K
DV/DT VD=0.67×VDRM(RGK=1K),TJ =125C
DV/DT IG=10mA, dIG/dt=0.1A/μs,TJ =125C
TGD IG=10mA, dIG/dt=0.1A/μs
TG
TJ =85C, VD=0.67*VDRM, VR=35V,
IT=IT(AV)
CLASSIFICATION OF IGT
RANK
RANGE
B
50-100
C
100-200
AA
8-15
AB
15-20
MIN TYP MAX UNIT
0.1 mA
1.0 μA
1.4
2.2
V
0.95 V
600 m
200 μA
0.8 V
5 mA
6 mA
V/μs
A/μs
2.2 μs
200 μs
AC
20-25
AD
25-50
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R301-003.G


Part Number XL1225
Description MEDIUM POWER LOW VOLTAGE TRANSISTOR
Maker Unisonic Technologies
Total Page 3 Pages
PDF Download

XL1225 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 XL1225 Thyristor
BLUE ROCKET ELECTRONICS
2 XL1225 MEDIUM POWER LOW VOLTAGE TRANSISTOR
Unisonic Technologies
3 XL1225 TO-92 Plastic-Encapsulate Transistors
Avic Technology
4 XL1225 Silicon Planar pnpn Thyristor
TGS
5 XL1225 SCRs
HAOPIN
6 XL1225 SCR
ETC
7 XL1225 SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
DC COMPONENTS





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy