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UTC2SD468 Datasheet Preview

UTC2SD468 Datasheet

LOW FREQUENCY POWER AMPLIFIER

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UTC2SD468
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER
AMPLIFIER
FEATURES
*Low frequency power amplifier
*Complement to 2SB562
1
TO-92
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
25
Collector-Emitter Voltage
VCEO
20
Emitter-Base Voltage
VEBO
5
Collector Current
Ic 1
Collector Peak Current
Ic(peak)
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1.5
Collector Power Dissipation
PC 0.9
Junction Temperature
Tj 150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector to base breakdown voltage V(BR)CBO
Ic=10µA, IE=0
25
Collector to emitter breakdown
V(BR)CEO
Ic=1mA, RBE=
20
voltage
Emitter to base breakdown voltage V(BR)EBO
IE=10µA, IC=0
5
Collector Cut-Off Current
ICBO
VCB=20V, IE=0
DC Current transfer ratio
hFE
VCE=2V, Ic=0.5A (note)
85
Collector to emitter saturation
VCE(sat)
Ic=0.8A, IB=0.08A (note)
voltage
Base to emitter voltage
VBE VCE=2V, Ic=0.5A (note)
Gain bandwidth product
fT VCE=2V, Ic=0.5A (note)
Collector output capacitance
Cob VCB=10V, IE=0, f=1MHz
Note: Pulse test
TYP
0.2
0.79
190
22
MAX
1
240
0.5
1
UNIT
V
V
V
µA
V
V
MHz
pF
UTC
UNISONIC TECHNOLOGIES CO. LTD 1
QW-R201-050,A
Datasheet pdf - http://www.DataSheet4U.net/




Unisonic Technologies

UTC2SD468 Datasheet Preview

UTC2SD468 Datasheet

LOW FREQUENCY POWER AMPLIFIER

No Preview Available !

UTC2SD468
NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE
RANK
RANGE
B
85 - 170
C
120 - 240
TYPICAL PERFORMANCE CHARACTERISTICS
www.DataSheet.co.kr
UTC
UNISONIC TECHNOLOGIES CO. LTD 2
QW-R201-050,A
Datasheet pdf - http://www.DataSheet4U.net/


Part Number UTC2SD468
Description LOW FREQUENCY POWER AMPLIFIER
Maker Unisonic Technologies
Total Page 3 Pages
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