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UT2955 - SINGLE P-CHANNEL POWER MOSFET

General Description

The UT2955 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch, in PWM applications, converters and power supplies.

Key Features

  • S.
  • RDS(ON) < 170mΩ @ VGS=-10 V, ID=-0.75A.
  • RDS(ON) < 180mΩ @ VGS=-10 V, ID=-1.5A.
  • RDS(ON) < 185mΩ @ VGS=-10 V, ID=-2.4A.
  • Low Capacitance.
  • Low Gate Charge.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT2955 SINGLE P-CHANNEL POWER MOSFET  DESCRIPTION The UT2955 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch, in PWM applications, converters and power supplies.  FEATURES * RDS(ON) < 170mΩ @ VGS=-10 V, ID=-0.75A * RDS(ON) < 180mΩ @ VGS=-10 V, ID=-1.5A * RDS(ON) < 185mΩ @ VGS=-10 V, ID=-2.