UT108N03 mosfet equivalent, n-channel power mosfet.
* RDS(ON) < 5.3mΩ @VGS = 10 V, ID = 25 A * Low Capacitance * Optimized Gate Charge * Fast Switching Capability * Avalanche Energy Specified
* SYMBOL
2.Drain
1 TO-220.
As advanced N-channel level power MOSFET, the UT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance.
* FEATURES.
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