UP9T15G mosfet equivalent, n-channel power mosfet.
* VDS(V)=20V * ID=12 .5A (VGS=4.5V) * RDS(ON) < 50mΩ @ VGS =4.5 V, ID =6 A * RDS(ON) < 80mΩ @ VGS =2.5 V, ID =5.2 A
* SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
.
* FEATURES
* VDS(V)=20V * ID=12 .5A (VGS=4.5V) * RDS(ON) < 50mΩ @ VGS =4.5 V, ID =6 A * RDS(ON) < 80mΩ @ VGS =2.5 V.
The UP9T15G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES
* VDS(V)=20V * ID=12 .5A (VGS=4.5V.
Image gallery
TAGS
Download (Size : 354.65KB)