UF730-E mosfet equivalent, n-channel power mosfet.
* RDS(ON)=0.85Ω@ VGS=10V, ID=3.0A * Avalanche Energy Specified * Rugged - SOA is Power Dissipation Limited * Fast Switching Capability * Linear Transfer Characteristics *.
such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
* FEATURES
* RDS(ON)=0.8.
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
* FEATURES
* RDS(ON)=0.85Ω@.
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