UF640-P
Overview
These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640-P suitable for resonant and PWM converter topologies.
- RDS(ON) =0.18Ω@ VGS=10V, ID=10A * Ultra Low gate charge (typical 43nC) * Low reverse transfer capacitance (CRSS = typical 100 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
- SYMBOL 1 Power MOSFET TO-220
