UF640-P mosfet equivalent, n-channel power mosfet.
* RDS(ON) =0.18Ω@ VGS=10V, ID=10A * Ultra Low gate charge (typical 43nC) * Low reverse transfer capacitance (CRSS = typical 100 pF) * Fast switching capability * Avalanch.
The UF640-P suitable for resonant and PWM converter topologies.
* FEATURES
* RDS(ON) =0.18Ω@ VGS=10V, ID=10A * Ultr.
These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications.
The UF640-P su.
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