* RDS(ON)=55mΩ @ VGS=-4.5V * RDS(ON)=80mΩ @ VGS=-2.5V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified
* SYMBOL 3.Drain P.

* FEATURES * RDS(ON)=55mΩ @ VGS=-4.5V * RDS(ON)=80mΩ @ VGS=-2.5V * Low capacitance * Low gate charge * Fast switchi.

The UDN302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES * RDS(ON)=55mΩ @ VGS=-4.5V * RDS(ON.

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