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BD435 - NPN SILICON TRANSISTOR

Description

The UTC BD435 is a NPN epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain, etc.

The UTC BD435 is suitable for medium power linear and switching applications.

Features

  • High DC current gain.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD BD435 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC BD435 is a NPN epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain, etc. The UTC BD435 is suitable for medium power linear and switching applications.  FEATURES * High DC current gain  ORDERING INFORMATION Ordering Number Lead Free Halogen Free BD435L-T60-K BD435G-T60-K BD435L-T60-K BD435G-T60-K Note: Pin assignment: G: Gate K: Cathode A: Anode Package TO-126 TO-126 Pin Assignment 123 KAG KAG Packing Bulk Bulk  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R221-026.
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