9N70 mosfet equivalent, n-channel power mosfet.
* RDS(ON) <1.3Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 10 pF) * High switching Speed * 100% avalanche tested * Improved dv/dt capability
* S.
* FEATURES
* RDS(ON) <1.3Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 10 pF) * High switching.
The UTC 9N70 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used.
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