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Unisonic Technologies

8N90 Datasheet Preview

8N90 Datasheet

900V N-CHANNEL MOSFET

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8N90
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
8 Amps, 900 Volts
N-CHANNEL POWER MOSFET
Power MOSFET
„ DESCRIPTION
The UTC 8N90 is an N-channel mode power MOSFET, using
UTC’s advanced technology to provide costumers planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance, superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 8N90 is generally applied in high efficiency switch
mode power supplies.
„ FEATURES
* 8A, 900V, RDS(ON)=1.55@ VGS=10V
* Fast Switching Speed
* 100% Avalanche Tested
* Improved dv/dt Capability
„ SYMBOL
2.Drain
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N90L-TA3-T
8N90G-TA3-T
Note: G: GND, D: Drain, S: Source
Package
TO-220
Pin Assignment
123
GDS
Packing
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-470.b




Unisonic Technologies

8N90 Datasheet Preview

8N90 Datasheet

900V N-CHANNEL MOSFET

No Preview Available !

8N90
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
900 V
±30 V
Continuous Drain Current (TC=25°C)
Pulsed Drain Current (Note 1)
Avalanche Current (Note 1)
ID
IDM
IAR
8A
25 A
6.3 A
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
EAS
EAR
dv/dt
850 mJ
17.1 mJ
4.0 V/ns
Total Power Dissipation (TC=25°C)
Linear Derating Factor above TC=25°C
Junction Temperature
PD
TJ
147
1.17
+150
W
W/°C
°C
Storage Temperature
TSTG
-55~+150
Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
°C
2. L=40mH, IAS=6.3A, VDD= 50V, RG=25, Starting TJ=25°C
3. ISD 8A, di/dt 200A/μs, VDD BVDSS, Starting TJ=25°C
4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θJA 62.5
Junction to Case
θJC 0.85
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS VGS=0V, ID=250µA
ΔBVDSS/ΔTJ ID=250μA, Referenced to 25°C
900
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS
VDS=900V, VGS=0V
VDS=720V, TC=125°C
IGSS VDS=0V ,VGS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance (Note 1)
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=4A
VDS=50V, ID=4A4
3.0
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note 1, Note 2)
Total Gate Charge
QG
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
VDS=25V,VGS=0V,f=1.0MHz
VDS=720V, VGS=10V, ID=8A
VDD=450V, ID=8A, RG=25
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
www.DatMaSahxiemetu4mUB.coodmy-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS =8A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR VGS=0V, IS=8A, dIF/dt=100A/μs
QRR (Note 1)
Note: 1. Pulse Test : Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
UNIT
°C/W
°C/W
TYP MAX UNIT
V
0.95 V/°C
10
100
±100
µA
µA
nA
5.0 V
940 1550 m
5.5 S
1600 2080
130 170
12 15
pF
pF
pF
35 45
10
14
40 90
110 230
70 150
70 150
nC
nC
nC
ns
ns
ns
ns
8A
25 A
1.4 V
530 ns
5.8 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-470.b


Part Number 8N90
Description 900V N-CHANNEL MOSFET
Maker Unisonic Technologies
Total Page 5 Pages
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